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PD57018-E |
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| Part Number | PD57018-E |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V... |
| Features |
■ Excellent thermal stability ■ Common source configuration ■ POUT = 18 W with 16.5dB gain@945 MHz/28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance... |
| Document |
 PD57018-E Data Sheet
PDF 911.62KB |
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STMicroelectronics |
RF POWER TRANSISTORS |
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STMicroelectronics |
RF POWER TRANSISTORS |
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STMicroelectronics |
RF POWER transistor |
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STMicroelectronics |
RF POWER transistor |
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STMicroelectronics |
RF POWER transistor |
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STMicroelectronics |
RF POWER TRANSISTORS |
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STMicroelectronics |
RF POWER transistor |
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STMicroelectronics |
RF POWER TRANSISTORS |
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STMicroelectronics |
RF POWER TRANSISTORS |
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STMicroelectronics |
RF POWER transistor |
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