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50JR22

Toshiba
Part Number 50JR22
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Sep 15, 2018
Detailed Description Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications • Dedicated to Current-Resonant Inverter Switc...
Datasheet PDF File 50JR22 PDF File

50JR22
50JR22


Overview
Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1.
Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application.
2.
Features (1) 6.
5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip.
(3) Enhancement mode (4) High-speed switching IGBT : tf = 0.
05 µs (typ.
) (IC = 50 A) FWD : trr = 0.
35 µs (typ.
) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.
55 V (typ.
) (IC = 50 A) (6) High junction temperature : Tj = 175 (max) 3.
Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2012-03 1 2014-01-06 Rev.
2.
0 GT50JR22 4.
Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC) (Tc = 25) (Tc = 100) VCES 600 V VGES ...


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