LPM9022 Dual N -Channel Enhancement Power MOSFET

LPM9022 Dual N -Channel Enhancement Power MOSFET

The LPM9022 integrates two N-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9022 is Pb-free and Halog.

Features

 Trench Technology
 Single NMOS: VDS=20V, ID=6A RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V
 Super high density cell design
 Extremely Low Threshold Voltage
 Small package DFN-6L 2*3mm Order Information LPM9022 □ □ □ F: Pb-Free Package Type QV: DFN-6L Applications
 Driver for Relay, Solenoid, Motor, LED etc.
 DC-DC converter circuit
 Power Switch
 Load Switch
 Charging Pin Configurations S1 1 S1 2 G1 3 Pad D1/2 6 S2 5 S2 4 G2 D1/2 G1 G2 S1 S2 Marking Information Device Marking Package LPM9022 DFN-6L Shipping 3K/REEL Pin D.