ERF9530 RF Power MOSFET

ERF9530 RF Power MOSFET

The ERF9530 is a N-Channel Enhancement Mode MOSFET transistor developed for RF power ampli er applications in the HF frequency range. High power in a TO-3PN package for an excellent ‘watt per dollar’ value. FEATURES • High Power and Economical: Pout > 25W (100W PEP) Gp > 10dB @ 12.5V, f=30MHz APPLIC.

Features

• High Power and Economical: Pout > 25W (100W PEP) Gp > 10dB @ 12.5V, f=30MHz APPLICATION Final ampli cation stages in mobile HF transceivers and ampli ers. TO-3PN PACKAGE OUTLINE Pins: 1. Gate 2. Drain 3. Source 4. Drain (Fin) SYM INCHES MIN MAX A .185 A1 .051 A2 .057 b .035 b2 .075 b4 .114 c .022 D .780 D1 .665 E .610 E1 .531 e .205 L .779 L1 .118 ØP .126 ØP1 .272 S .193 .193 .059 .065 .045 .087 .126 .031 .791 .677 .622 .539 .225 .795 .145 .134 .280 .201 MILLIMETER MIN MAX 4.70 4.90 1.30 1.50 1.45 1.65 0.90 1.15 1.90 2.20 2.90 3.20 0.55 0.80 19.80 20.10 16.90 17.20 15.50 15.80 13.50 13.