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Technical Data : Page1 of 3 N0882NC420 - Power Thyristor 4200 VDRM; ********************************************************************************************************** HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS Features: . All Diffused Structure . Center Amplifying Gate Configu.
. All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 4200 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) N0882NC420 4200 4200 4300 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 100 mA (3) 1000 V/sec Notes: All ratin.
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | N0882NC420 |
WESTCODE |
Phase Control Thyristor |
|
| 2 | N0882NC400 |
WESTCODE |
Phase Control Thyristor |
|
| 3 | N0882NC440 |
WESTCODE |
Phase Control Thyristor |
|
| 4 | N0882NC450 |
WESTCODE |
Phase Control Thyristor |
|
| 5 | N0800S |
Renesas |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 6 | N080ICE-GB0 |
INNOLUX |
LCD |
|
| 7 | N080ICE-GB1 |
INNOLUX |
LCD MODULE |
|
| 8 | N089A1-L01 |
CHI MEI |
LCD Module |
|
| 9 | N089L6-L02 |
CHI MEI |
LCD Module |
|
| 10 | N089L6-L03 |
CHI MEI |
LCD |
|
| 11 | N08L083WC2C |
NanoAmp Solutions |
8Mb Ultra-Low Power Asynchronous CMOS SRAM |
|
| 12 | N08L1618C2A |
NanoAmp Solutions |
8Mb Ultra-Low Power Asynchronous CMOS SRAM |
|
| 13 | N08L163WC1C |
NanoAmp Solutions |
8Mb Ultra-Low Power Asynchronous CMOS SRAM |
|
| 14 | N08L163WC2A |
NanoAmp Solutions |
8Mb Ultra-Low Power Asynchronous CMOS SRAM |
|
| 15 | N08L163WC2C |
NanoAmp Solutions |
8Mb Ultra-Low Power Asynchronous CMOS SRAM |
|
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