C717DB HIGH POWER THYRISTOR

C717DB HIGH POWER THYRISTOR

Technical Data : Page1 of 3 C717DB - Power Thyristor 4200 VDRM; ********************************************************************************************************** HIGH POWER THYRISTOR PHASE CONTROL APPLICATIONS Features: . All Diffused Structure . Spoke Amplifying Gate Configuration . .

Features

. All Diffused Structure . Spoke Amplifying Gate Configuration . Blocking capabilty up to 4200 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) C717 4200 4200 4300 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 75 mA (3) 1000 V/sec Conducting - on state P.