ADM3N06B Datasheet

ADM3N06B N-Channel MOSFET

ADV ADM3N06B N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 3.0A RDS(ON) (mΩ) 105mΩ SOT-23 Absolute Maximum Ratings ( TA = 25°C unless otherwise specified ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum .

Features

DSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ VGS=0V, IDS=250uA VDS= 60V, VGS=0V VDS=60V, VGS=0V TJ=55°C VDS=VGS, IDS=250uA VGS=±20V, VDS=0V VGS= 10V, IDS=3A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS= 3V, Frequency=1.0MHz Switching Characteristics td(ON) Turn-on Delay Time⑴ tr Turn-on Rise Time⑴ td(OFF) Turn-off Delay Time⑴ tf Turn-off Fall Time⑴ Qg Total Gate Charge⑴ Qgs Gate-Source Charge⑴ Qgd Gate-Drain C.