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IRFD1Z1 |
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| Part Number | IRFD1Z1 |
| Manufacturer | Harris Semiconductor |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers ... |
| Features |
• 0.4A and 0.5A, 60V and 100V • rDS(ON) = 2.4Ω and 3.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive powe... |
| Document |
 IRFD1Z1 Data Sheet
PDF 57.16KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Harris Semiconductor |
N-Channel MOSFET |
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GE |
FIELD EFFECT POWER TRANSISTOR |
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GE |
FIELD EFFECT POWER TRANSISTOR |
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Harris Semiconductor |
N-Channel MOSFET |
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GE |
FIELD EFFECT POWER TRANSISTOR |
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Harris Semiconductor |
N-Channel MOSFET |
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GE |
FIELD EFFECT POWER TRANSISTOR |
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Vishay |
Power MOSFET |
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Intersil Corporation |
N-Channel Power MOSFET |
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International Rectifier |
Power MOSFET |
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