GSM6601 MOSFET

GSM6601 MOSFET

GSM6601, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pi.

Features

 N-Channel 30V/3.4A,RDS(ON)=68mΩ@VGS=10V 30V/3.0A,RDS(ON)=74mΩ@VGS=4.5V 30V/2.0A,RDS(ON)=90mΩ@VGS=2.5V
 P-Channel -30V/-2.6A,RDS(ON)=115mΩ@VGS=-10V -30V/-2.0A,RDS(ON)=150mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)=235mΩ@VGS=-2.5V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 TSOP-6 package design Applications
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter GSM6601 Pin Symbo l 1 G1 2 S2.