GSM4953WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features .
-30V/-5.4A,RDS(ON)=60mΩ@VGS=-10V -30V/-4.2A,RDS(ON)=80mΩ@VGS=-4.5V Super high density cell design for extremely
low RDS (ON) SOP
–8P package design
Applications
LED Display Load Switch CCFL Inverter Power Management in Notebook Computer
Packages & Pin Assignments
GSM4953WSSF(SOP- 8P)
Pin Description Pin Description
1 Source 1 5
Drain 2
2 Gate 1 6 Drain 2
3 Source 2 7
Drain 1
4 Gate 2 8 Drain 1
GSM4953WS
www.gs-power.com 1
Ordering Information
Part Number
GSM4953WSSF
Package
SOP- 8P
Quantity Reel
2500 PCS
Marking Information
Lot Code Date Code
4953WS AAAAAA BBBBBB.
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