GSMDS2305 P-Channel MOSFET

GSMDS2305 P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

Features

„ -20V, -11A, RDS(ON)=16mΩ@VGS=-4.5V „ Improved dv/dt capability „ Fast switching „ Suit for -1.8V Gate Drive Applications „ Green Device Available „ SOP-8 package design Applications „ Notebook „ Load Switch „ Networking Packages & Pin Assignments GSMDS2305SF (SOP-8) GSMDS2305 Pin Description Pin 1 Source 5 2 Source 6 3 Source 7 4 Gate 8 Description Drain Drain Drain Drain www.gs-power.com 1 Ordering Information Part Number GSMDS2305SF Marking Information Package SOP-8 Quantity Reel 4000 PCS Absolute Maximum Ratings TA=25ºC Unless ot.