GSM02P15 P-Channel MOSFET

GSM02P15 P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode. These .

Features

 -150V/-1A,RDS(ON)=750mΩ@VGS=-1V
 Improved dv/dt capability
 Fast switching
 Green Device Available Applications
 Networking
 Load Switch
 LED applications Packages & Pin Assignments GSM02P15TSF (TSOP-6) Pin Description 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 6 Drain TSOP-6 P-Channel Version_1.0 Notice Ordering Information Part Number GSM02P15TSF Marking Information Package TSOP-6 Quantity Reel 3000 PCS Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol VDS VGS ID IDM PD TJ TSTG Parameter Drain-So.