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SMD Type N-Channel MOSFET NTR4501NT1G ■ Features ● VDS (V) = 20V ● ID = 3.2 A (VGS = 4.5V) ● RDS(ON) ＜ 70mΩ (VGS = 4.5V) ● RDS(ON) ＜ 85mΩ (VGS = 2.5V) ● Leading Planar Technology for Low Gate Charge / Fast Switching ● 2.5 V Rated for Low Voltage Gate Drive +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 .
● VDS (V) = 20V
● ID = 3.2 A (VGS = 4.5V)
● RDS(ON) ＜ 70mΩ (VGS = 4.5V)
● RDS(ON) ＜ 85mΩ (VGS = 2.5V)
● Leading Planar Technology for Low Gate Charge / Fast Switching
● 2.5 V Rated for Low Voltage Gate Drive
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
MOSFET
Unit: mm
0.1 +0.05 -0.01
1. Gate 2. Source 3. Drain
0-0.1 +0.10.38
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note.1)
TA=25℃ TA=85℃
Pulsed Drain Current @ tP=10us
Power Dissipa.
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