MEF64M16G150M3ND 1024Mbit 3.3V - NAND Flash Memory Module

MEF64M16G150M3ND 1024Mbit 3.3V - NAND Flash Memory Module

The MEF64M16ND is a 1024Megabit 3.3V NAND flash memory MCM, assembled in multilayered cofired ceramic package, designed for low noise and better ground bounce. Flowcharts of programming, byte write, block erase and other specifications are identical to “K9K1G08U0A" specifications and should be used .

Features

q 3.3V±10% Supply/ Programming q Access Time: 50ns (Page Read) q Fast Page Write Cycle Time (200uSec ) q Package type: 66-Pin Ceramic PGA 1.385” SQ 66-Pin Ceramic PGA 1.080” SQ q 60mA typical erase/program current q 60mA active read current q Embedded Program/Erase Algorithms q Industrial & Military Screening q 100,000 Erase/Program Cycles Product Description The MEF64M16ND is a 1024Megabit 3.3V NAND flash memory MCM, assembled in multilayered cofired ceramic package, designed for low noise and better ground bounce. Flowcharts of programming, byte write, block erase and other specifications .