3SK302 Silicon N-Channel MOS

3SK302 Silicon N-Channel MOS

High Frequency FETs 3SK285 3SK302(Tentative), 3SK306(Tentative) Silicon N-Channel MOS For UHF amplification s Features q Though low voltage operation, performance is equivalent to the conventional product. q Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/maga.

Features

q Though low voltage operation, performance is equivalent to the conventional product. q Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magazine packing are available. 3SK302 0.65±0.15 +0.2 2.8
  –0.3 +0.2 1.5
  –0.3 Unit : mm 0.65±0.15 0.5R 41 2.9±0.2 1.9±0.2 0.95 0.95 32 +0.1 0.4
  –0.05 0 to 0.1 +0.1 0.16
  –0.06 +0.2 1.1
  –0.1 0.8 s Absolute Maximum Ratings (Ta = 25˚C) Parameter Drain-Source voltage Gate 1-Source voltage Gate 2-Source voltage Drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S IDS P.