AOTF12N50 12A N-Channel MOSFET

AOTF12N50 12A N-Channel MOSFET

Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabil.

Features

energy G EAS 908 MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt 40 5 TC=25°C Power Dissipation B Derate above 25oC PD 250 2 AOTF12N50 12* 8.4* 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. AOT12N50/AOB12N50 65 0.5 0.5 AOTF12N50 65 -2.5 S Units V V A A mJ mJ V/ns W W/ oC °C.