2SD823 Silicon NPN Power Transistor

2SD823 Silicon NPN Power Transistor

·Collector Current: IC= 6A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI.

Features

Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V tf Fall Time IC= 5A; IB1= 0.6A 2SD823 MIN TYP. MAX UNIT 90 V 200 V 7 V 1.5 V 1.5 V 0.1 mA 0.1 mA 20 15 MHz 1.0 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notificati.