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PDD4701 |
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| Part Number | PDD4701 |
| Manufacturer | Potens semiconductor |
| Description | These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide ... |
| Features |
Fast switching Green Device Available Suit for 4.5V Gate Drive Applications Applications DC Fan Motor Drive Applications Networking Half / Full Bridge Topology Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – P... |
| Document |
 PDD4701 Data Sheet
PDF 605.26KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Potens semiconductor |
P-Channel MOSFETs |
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Potens semiconductor |
N-Channel MOSFETs |
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Potens semiconductor |
N-Channel MOSFETs |
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Potens semiconductor |
P-Channel MOSFETs |
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Potens semiconductor |
N-Channel MOSFETs |
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Potens semiconductor |
P-Channel MOSFETs |
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Potens semiconductor |
P-Channel MOSFETs |
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Potens semiconductor |
N-Channel MOSFETs |
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Potens semiconductor |
P-Channel MOSFETs |
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Potens semiconductor |
N-Channel MOSFETs |
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