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PDD6701

Potens semiconductor
Part Number PDD6701
Manufacturer Potens semiconductor
Description N+P Dual Channel MOSFETs
Published Aug 22, 2018
Detailed Description 60V N+P Dual Channel MOSFETs PDD6701 General Description These N+P dual Channel enhancement mode power field effect tr...
Datasheet PDF File PDD6701 PDF File

PDD6701
PDD6701

Overview
60V N+P Dual Channel MOSFETs PDD6701 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO252-4L Pin Configuration D1 D2 D1/D2 S1G1S2G2 G1 G2 S1 S2 BVDSS 60V -60V RDSON 30m 48m ID 19A -17A Features  Fast switching  Green Device Available  Suit for 4.
5V Gate Drive Applications Applications  DC Fan  Motor Drive Applications  Net...


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