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PDH3960

Potens semiconductor
Part Number PDH3960
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 22, 2018
Detailed Description 30V N-Channel MOSFETs PDH3960 General Description These N-Channel enhancement mode power field effect transistors are ...
Datasheet PDF File PDH3960 PDF File

PDH3960
PDH3960

Overview
30V N-Channel MOSFETs PDH3960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO263 Pin Configuration D D G S G S BVDSS 30V RDSON 3m ID 176A Features  30V, 176A, RDS(ON) =3mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  MB / VGA / Vcore  POL Applications  SMPS 2nd SR ...


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