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PDD3808Z

Potens semiconductor
Part Number PDD3808Z
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 22, 2018
Detailed Description 30V N-Channel MOSFETs PDD3808Z General Description These N-Channel enhancement mode power field effect transistors are...
Datasheet PDF File PDD3808Z PDF File

PDD3808Z
PDD3808Z

Overview
30V N-Channel MOSFETs PDD3808Z General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO252-4L Dual Pin Configuration D1 D2 D1 S1G1S2G2 G1 G2 S1 D2 S2 BVDSS 30V RDSON 9m ID 42A Features  30V,42A, RDS(ON) =9mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  Green Device Available Applications  MB / VGA / Vcore  POL Applications  SMPS...


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