DatasheetsPDF.com

PDD0960

Potens semiconductor
Part Number PDD0960
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 22, 2018
Detailed Description 100V N-Channel MOSFETs PDD0960 General Description These N-Channel enhancement mode power field effect transistors are...
Datasheet PDF File PDD0960 PDF File

PDD0960
PDD0960

Overview
100V N-Channel MOSFETs PDD0960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration D S G G D S BVDSS 100V RDSON 17m ID 48A Features  100V,48A, RDS(ON) =17mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Networking  Load Switch  LED applications A...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)