PDD6902 Datasheet (PDF), Stock and Price, Potens semiconductor MOSFETs, Distributor

PDD6902 N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

Features

 60V,90A, RDS(ON) =4.5mΩ@VGS = 10V
 Improved dv/dt capability
 Fast switching
 Green Device Available Applications
 PowerTools
 Quick Charger
 LED applications
 Motor Drive Applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous (TC=25℃) Drain Current
  – Continuous (TC=100℃) Drain Current
  – Pulsed1 Single Pulse Avalanc.

No.	Part #	Manufacture	Description
1	PDD6901	Potens semiconductor	P-Channel MOSFETs
2	PDD6903	Potens semiconductor	P-Channel MOSFETs
3	PDD6904	Potens semiconductor	N-Channel MOSFETs
4	PDD6905	Potens semiconductor	P-Channel MOSFETs
5	PDD6906	Potens semiconductor	N-Channel MOSFETs