PDD4904 |
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Part Number | PDD4904 |
Manufacturer | Potens semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
Features |
40V, 80A, RDS(ON)=5.5mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available Applications Notebook Load Switch LED applications Hand-Held Device Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipation (TC=25℃) Power Dissipa... |
Document |
PDD4904 Data Sheet
PDF 455.75KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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Potens semiconductor |
P-Channel MOSFETs |
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Potens semiconductor |
N-Channel MOSFETs |
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Potens semiconductor |
P-Channel MOSFETs |
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Potens semiconductor |
N-Channel MOSFETs |
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Potens semiconductor |
P-Channel MOSFETs |
|
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|
Potens semiconductor |
P-Channel MOSFETs |
|
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Potens semiconductor |
N-Channel MOSFETs |
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Potens semiconductor |
P-Channel MOSFETs |
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Potens semiconductor |
N-Channel MOSFETs |
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Potens semiconductor |
N+P Dual Channel MOSFETs |
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