PDD2612A N-Channel MOSFETs

PDD2612A N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

Features

 20V,30A, RDS(ON) =17mΩ@VGS = 4.5V
 Improved dv/dt capability
 Fast switching
 100% EAS Guaranteed
 Green Device Available Applications
 MB / VGA / Vcore
 POL Applications
 SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous (Chip Limitation ,TC=25℃) Drain Current
  – Continuous (Chip Limitation ,TC=100℃) Drain Current
  – P.