PMF02N65M Datasheet

PMF02N65M N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutatio.

Features

 Improved dv/dt capability
 Fast switching
 100% EAS Guaranteed
 Green Device Available ID 2A TO220F Pin Configuration GDS Applications
 High efficient switched mode power supplies
 TV Power
 Adapter/charger
 Server Power
 PV Inverter / UPS Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous (TC=25℃) Drain Current
  – Continuous (TC=100℃) Drain Current
  – Pulsed.