PDN2309 P-Channel MOSFETs

PDN2309 P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

Features

 -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V
 Improved dv/dt capability
 Fast switching
 Green Device Available
 Suit for -1.8V Gate Drive Applications Applications
 Notebook
 Load Switch
 Battery Protection
 Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous (TC=25℃) Drain Current
  – Continuous (TC=100℃) Drain C.