PMEN0998S N-Channel MOSFETs

PMEN0998S N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

Features

 100V,0.2A, RDS(ON) =6Ω@VGS=10V
 Improved dv/dt capability
 Fast switching
 Green Device Available
 G-S ESD Protection Diode Embedded Applications
 Motor Drive
 Power Tools
 LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous (TC=25℃) Drain Current
  – Continuous (TC=100℃) Drain Current
  – Pulsed1 Power Dissipation (TC.