PDEN2320S |
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Part Number | PDEN2320S |
Manufacturer | Potens semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
Features |
20V,1.45A, RDS(ON) =300mΩ@VGS = 4.5V Improved dv/dt capability Fast switching Green Device Available Suit for 1.5V Gate Drive Applications Applications Notebook Load Switch Battery Protection Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Conti... |
Datasheet |
PDEN2320S Data Sheet
PDF 843.38KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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Potens semiconductor |
P-Channel MOSFETs |
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Potens semiconductor |
P-Channel MOSFETs |
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Potens semiconductor |
P-Channel MOSFETs |
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Potens semiconductor |
P-Channel MOSFETs |
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Potens semiconductor |
N-Channel MOSFETs |
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Potens semiconductor |
P-Channel MOSFETs |
|
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|
Potens semiconductor |
P-Channel MOSFETs |
|
|
|
Potens semiconductor |
N-Channel MOSFETs |
|
|
|
Potens semiconductor |
N-Channel MOSFETs |
|
|
|
Potens semiconductor |
N-Channel MOSFETs |
|
|
|
Potens semiconductor |
N-Channel MOSFETs |
|
|
|
Potens semiconductor |
N-Channel MOSFETs |
|