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PDS0960 |
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| Part Number | PDS0960 |
| Manufacturer | Potens semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
| Features |
100V,15A, RDS(ON) =18mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications Networking Load Switch LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipation (TC=25... |
| Document |
 PDS0960 Data Sheet
PDF 705.22KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Potens semiconductor |
N-Channel MOSFETs |
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Potens semiconductor |
N-Channel MOSFETs |
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Potens semiconductor |
N-Channel MOSFETs |
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Potens semiconductor |
N-Channel MOSFETs |
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Potens semiconductor |
N+P Channel MOSFETs |
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ICP DAS |
Programmable Device Servers |
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CUI |
DC-DC CONVERTER |
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CUI |
DC-DC CONVERTER |
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CUI |
DC-DC CONVERTER |
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CUI |
DC-DC CONVERTER |
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