FEATURES: • High-density 256K-bit CMOS static RAM Module • Customer-configured to 16Kx16, 32Kx8 or 64Kx4 • Fast access times -Commercial - 25ns -Military - 35ns • Low-power consumption -Active: 3.2W (typ.) (in 16K x 16 organization) -Standby: 0.16mW (typ.) • Utilizes 161DT6167s - high-performance 16.
• High-density 256K-bit CMOS static RAM Module
• Customer-configured to 16Kx16, 32Kx8 or 64Kx4
• Fast access times -Commercial - 25ns -Military - 35ns
• Low-power consumption -Active: 3.2W (typ.) (in 16K x 16 organization) -Standby: 0.16mW (typ.)
• Utilizes 161DT6167s - high-performance 16K x 1 CMOS static RAMs produced with IDT's advanced CEMOS~ technology
• CEMOS process virtually eliminates alpha particle soft error rates (with no organic die coating)
• Assembled with IDT's high-reliability vapor phase solder reflow process
• Offered in 40-pin, 900 mil center sidebraze DIP. achieving very .
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | IDT7M624S |
IDT |
1M-Bit CMOS Static RAM Module | |
2 | IDT7M1001 |
Integrated Device |
128K x 8 64K x 8 CMOS DUAL-PORT STATIC RAM MODULE | |
3 | IDT7M1002 |
Integrated Device |
16K x 32 CMOS DUAL-PORT STATIC RAM MODULE | |
4 | IDT7M1003 |
Integrated Device |
128K x 8 64K x 8 CMOS DUAL-PORT STATIC RAM MODULE | |
5 | IDT7M1014 |
Integrated Device |
4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE | |
6 | IDT7M1024 |
Integrated Device |
4K x 36 BiCMOS SYNCHRONOUS DUAL-PORT STATIC RAM MODULE | |
7 | IDT7M134S |
IDT |
CMOS Dual-Port RAM Module | |
8 | IDT7M135S |
IDT |
CMOS Dual-Port RAM Module | |
9 | IDT7M136 |
IDT |
CMOS Dual-Port RAM Module | |
10 | IDT7M137 |
IDT |
CMOS Dual-Port RAM Module | |
11 | IDT7M144S |
IDT |
CMOS Slave Dual-Port RAM Module | |
12 | IDT7M145S |
IDT |
CMOS Slave Dual-Port RAM Module | |
13 | IDT7M203S |
IDT |
CMOS Parallel In-Out FIFO Module | |
14 | IDT7M204S |
IDT |
CMOS Parallel In-Out FIFO Module | |
15 | IDT7M205 |
IDT |
CMOS Parallel In-Out FIFO Module |