1N5526 |
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| Part Number | 1N5526 |
| Manufacturer | MA-COM |
| Description | 1N5518 thru 1N5546 Low Noise Zener Diode Series Features Designed For Use @ Low Current Low Leakage Current Low Impedance Low Noise Axial Leaded DO-7 Package RoHS* Compliant Rev. V1 DO-7... |
| Features |
Designed For Use @ Low Current Low Leakage Current Low Impedance Low Noise Axial Leaded DO-7 Package RoHS* Compliant Rev. V1 DO-7 Electrical Specifications1: TA = +25°C (unless otherwise specified) Part # Zener Voltage VZ @ IZT Test Current IZT Zener Impedance ZZT @ IZT Reverse Leakage Current No suffix, A B, C, D suffix suffixes Noise Density @ IZ = 250 µA Regulation Factor Typ. Typ. Max. Max. Max. Max. (V) (mA) (Ω) (µA) (V) (V) (µV/√Hz) (V) (mA) 1N5518 3.3 20 26 5 0.9 1 0.5 0.9 2 1N5519 3.6 20 24 3 0.9 1 0.5 0.9 2 1N5520 3.9 20 22 1 0.9 1 0.... |
| Datasheet |
 1N5526 Data Sheet
PDF 640.82KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Knox Semiconductor Inc |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE/ LOW LEAKAGE |
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JGD |
0.4W Low Voltage Avalanche Diodes |
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MA-COM |
Low Noise Zener Diode |
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New Jersey Semi-Conductor |
(1N5518A - 1N5546A) ZENER DIODES |
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Motorola |
LOW VOLTAGE AVALANCHE ZENER DIODES |
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Compensated Deuices Incorporated |
LOW REVERSE LEAKAGE CHARACTERISTICS |
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Microsemi |
500mW Zener Diodes |
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Central Semiconductor |
SILICON ZENER DIODES |
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VPT |
Low Noise Zener Diode |
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Compensated Deuices Incorporated |
LOW REVERSE LEAKAGE CHARACTERISTICS |
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