DTGN50N60 |
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Part Number | DTGN50N60 |
Manufacturer | Din-Tek |
Description | Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS... |
Features |
High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Times 10us Extremely enhanced avalanche capability
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage Gate-Emitter Voltage
VCES VGES
600 V 20 V
Collector Current
@Tc=25 @Tc=100
100 A IC
50 A
Pulsed Collector Current Diode Continuous Forward Current @Tc=100 Diode Maximum Forward Current
ICM* 150 A IF 50 A IFM 100 A
Maximum Power Dissipation
@Tc=25 @Tc=100
277 W PD
111 W
Maximum Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 to + 150
*Repet... |
Datasheet |
DTGN50N60 Data Sheet
PDF 1.49MB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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Din-Tek |
Field Stop Trench IGBTs |
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Din-Tek |
Field Stop Trench IGBTs |
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Din-Tek |
Field Stop Trench IGBTs |
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Din-Tek |
Field Stop Trench IGBTs |
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GPD Optoelectronic Devices |
(DTG-xxxx) High Power Transistor |
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GPD Optoelectronic Devices |
(DTG-xxxx) High Power Transistor |
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GPD Optoelectronic Devices |
(DTG-xxxx) High Power Transistor |
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GPD Optoelectronic Devices |
(DTG-xxxx) High Power Transistor |
|
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GPD Optoelectronic Devices |
(DTG-xxxx) High Power Transistor |
|
|
|
GPD Optoelectronic Devices |
(DTG-xxxx) High Power Transistor |
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