PDEC2209K P-Channel MOSFETs

PDEC2209K P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

Features

 -20V,-5.6A, RDS(ON) =33mΩ @VGS = -4.5V
 Improved dv/dt capability
 Fast switching
 Green Device Available Applications
 MB / VGA / Vcore
 POL Applications
 Networking S1 S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous (TA=25℃) Drain Current
  – Continuous (TA=70℃) .