PDC2305Z |
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Part Number | PDC2305Z |
Manufacturer | Potens semiconductor |
Description | These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
Features |
-20V,-26A, RDS(ON) =15mΩ@VGS = -4.5V Improved dv/dt capability Fast switching Green Device Available Suit for -1.8V Gate Drive Applications Applications Notebook Load Switch Networking Hand-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Cur... |
Datasheet |
PDC2305Z Data Sheet
PDF 425.64KB |
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