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PDB2116M |
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| Part Number | PDB2116M |
| Manufacturer | Potens semiconductor |
| Description | These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state re... |
| Features |
Fast switching Green Device Available Suit for 1.8V Gate Drive Applications Applications Notebook Load Switch Networking Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current ... |
| Document |
 PDB2116M Data Sheet
PDF 560.34KB |
| Distributor | Stock | Price | Buy |
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