PDB2216S |
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| Part Number | PDB2216S |
| Manufacturer | Potens semiconductor |
| Description | These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide ... |
| Features |
Fast switching Green Device Available Suit for 1.8V Gate Drive Applications Applications Notebook Load Switch Networking Hand-held Instruments S1 S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissi... |
| Datasheet |
 PDB2216S Data Sheet
PDF 717.23KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Potens semiconductor |
N+P Dual Channel MOSFETs |
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Potens semiconductor |
N+P Dual Channel MOSFETs |
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Potens semiconductor |
P-Channel MOSFETs |
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BOURNS |
24mm Rotary Potentiometer |
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BOURNS |
24 mm Guitar Potentiometer |
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Advanced Photonix |
Blue Enhanced Photoconductive Silicon Photodiode |
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Advanced Photonix |
Blue Enhanced Photoconductive Silicon Photodiode |
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Advanced Photonix |
Blue Enhanced Photoconductive Silicon Photodiode |
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Advanced Photonix |
Blue Enhanced Photoconductive Silicon Photodiode |
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ETC |
Silicon Photodiode |
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