MSAT-N25 NIP Diode Attenuator Shunt Element

MSAT-N25 NIP Diode Attenuator Shunt Element

A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is also suited for other applications in 0.1 ~ 10 GHz range. Features • Low Distortion Harmonics.

Features

• Low Distortion Harmonics at 85 dBc Typical
• Broadband performance, beyond 10 GHz
• Low Insertion loss & high attenuation range, 27 dB Electrical Specifications, TC = +25 °C SYMBOL TEST CONDITIONS VBR Lt Rs min IR = 10 mA IF = 10 mA I = -100 mA IR = 6 mA 10% / 90% F = 500 MHz Rs High I = -10 mA F = 500 MHz Rs Low I = 1 mA F = 500 MHz ATTEN I = -100 mA F < 10 GHz MIN 200 2000
  – 2000 30 20 TYPICAL
  – 3000 1.5 3000 40 25 MAX
  – 5000 2.5 4000 50
  – UNITS V ns W W W dB Absolute Maximum Ratings RATING VR IF θJC Pdis TJ TSTG TSOLDER LIMITS 200 200 20 2 (CW) +175 -65 to +125 +260 .