MQ011K1VPX High Power RF LDMOS FET

MQ011K1VPX High Power RF LDMOS FET

The MQ011K1VPX is a 1100-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.2 GHz. It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as FM ra.

Features

 High Efficiency and Linear Gain Operations
 Integrated ESD Protection
 Internally Matched for Ease of Use
 Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
 Excellent thermal stability, low HCI drift
 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1/4 MQ011K1VPX LDMOS TRANSISTOR Document Number: MQ011K1VPX Preliminary Datasheet V1.0 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS 125 Vdc Gate--Source Voltage VGS -10 to +10 Vdc Operating Voltage VDD +55 Vdc Storage Temperatu.