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ITSN20015P2 |
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| Part Number | ITSN20015P2 |
| Manufacturer | Innogration |
| Description | The ITSN20015P2 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications, with frequencie... |
| Features |
High Efficiency and Linear Gain Operations Integrated ESD Protection Designed for broadband operation Excellent ruggedness Large Positive and Negative Gate/Source Voltage Range for Improved C... |
| Document |
 ITSN20015P2 Data Sheet
PDF 781.93KB |
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Infineon |
Smart High-Side NMOS-Power Switch |
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Infineon |
Smart High-Side Power Switch |
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Infineon |
Smart High-Side Power Switch |
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Infineon |
Smart High-Side Power Switch |
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Infineon |
Smart High-Side Power Switch |
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Infineon |
Smart High-Side Power Switch |
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Infineon |
Smart High-Side NMOS-Power Switch |
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Infineon |
Smart Octal High-Side NMOS-Power Switch |
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Infineon |
Smart High-Side NMOS-Power Switch |
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Infineon |
Smart High-Side NMOS-Power Switch |
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