ITCH22210B2E |
|
Click to view a larger image
| Part Number | ITCH22210B2E |
| Manufacturer | Innogration |
| Description | The ITCH22210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Cla... |
| Features |
... |
| Datasheet |
 ITCH22210B2E Data Sheet
PDF 936.51KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Innogration |
High Power RF LDMOS FET |
|
|
|
|
Innogration |
High Power RF LDMOS FET |
|
|
|
|
Innogration |
High Power RF LDMOS FET |
|
|
|
|
Innogration |
High Power RF LDMOS FET |
|
|
|
|
Innogration |
High Power RF LDMOS FET |
|
|
|
|
Innogration |
High Power RF LDMOS FET |
|
|
|
|
Innogration |
High Power RF LDMOS FET |
|
|
|
|
Innogration |
High Power RF LDMOS FET |
|
|
|
|
Innogration |
High Power RF LDMOS FET |
|
|
|
|
Innogration |
High Power RF LDMOS FET |
|