Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbo.
• Low collector-emitter saturation voltage VCE(sat)
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature
VCBO VCEO VEBO
IC ICP PC Tj Tstg
20 15 5 2 6 600 150 −55 to +150
V V V A A mW °C °C
Note) *: Measure on the ceramic substrate at 15 mm × 15 .
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | 2SC5720 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5723 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
3 | 2SC5729 |
Rohm |
Medium power transistor | |
4 | 2SC570 |
Toshiba |
SILICON NPN TRANSISTOR | |
5 | 2SC5700 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
6 | 2SC5700 |
Renesas |
Silicon NPN Transistor | |
7 | 2SC5702 |
Renesas |
Silicon NPN Epitaxial Type Transistor | |
8 | 2SC5702 |
Hitachi |
Silicon NPN Transistor | |
9 | 2SC5703 |
Toshiba Semiconductor |
NPN Transistor | |
10 | 2SC5704 |
CEL |
NPN SILICON RF TRANSISTOR | |
11 | 2SC5704-A |
CEL |
NPN SILICON RF TRANSISTOR | |
12 | 2SC5704-T3-A |
CEL |
NPN SILICON RF TRANSISTOR | |
13 | 2SC5706 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
14 | 2SC5706 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
15 | 2SC5706 |
Weitron Technology |
NPN Transistor |