NXPSC20650W Silicon Carbide Diode

NXPSC20650W Silicon Carbide Diode

Dual Silicon Carbide Schottky diode in a 3-lead TO-247 plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Si.

Features

• Highly stable switching performance
• High forward surge capability IFSM
• Extremely fast reverse recovery time
• Superior in efficiency to Silicon Diode alternatives
• Reduced losses in associated MOSFET
• Reduced EMI
• Reduced cooling requirements
• RoHS compliant 3. Applications
• Power factor correction
• Telecom / Server SMPS
• UPS
• PV inverter
• Electrical Vehicle Charger
• Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IO(AV) limiting average output Tmb ≤ 105 °C; δfactor = 0.5 ; square- cu.