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2SB833

Part Number	2SB833
Manufacturer	Toshiba
Description	SILICON PNP TRANSISTOR
Published	Jul 17, 2018
Detailed Description	2SB833 SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . High Collec...
Datasheet	2SB833 PDF File

Overview

2SB833 SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES .
High Collector Current : Ic=-30A .
High DC Current Gain : h FE ( 2 )=1000(Min.
) (V CE =-5V, I C =-20A) .
Monolithic Construction with Built-in Base-Emitter Shunt Resistor.
Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO v EBO ic lB_ ?C Ti Tstg RATING -80 -80 -5 -30 -1 UNIT 150 150 -65-150 1.
BASE 2.
EMITTER COLLECTOR (CASE) TO — TOSHIBA TC—3 , TB-3 2— 2 1A1 Mounting kit...

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