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2SB755

Part Number	2SB755
Manufacturer	Toshiba
Description	SILICON PNP TRANSISTOR
Published	Jul 17, 2018
Detailed Description	2SB755 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage ...
Datasheet	2SB755 PDF File

Overview

2SB755 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage VCEO=-150V (Min.
) High Transition Frequency : f T=20MHz (Typ.
) Complementary to 2SD845.
Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation „ I (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO RATING -150 v EBO IC -5 -12 IE 12 PC 120 Ti 150 Tstg -55^,150 1.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER JEDEC EIAJ TOSHIBA 2 — 34 A 1A Weigh...

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