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2SB753

Part Number	2SB753
Manufacturer	Toshiba
Description	SILICON PNP TRANSISTOR
Published	Jul 17, 2018
Detailed Description	SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) o 2SB753 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATI...
Datasheet	2SB753 PDF File

Overview

SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) o 2SB753 HIGH CURRENT SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
FEATURES: High Collector Current : Iq=-7A Low Collector Saturation Voltage : VcE(sat)=-0.
5V(Max.
) at I C =-4A High Collector Power Dissipation.
Complementary to 2SD843.
INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL 'CBO 'CEO 'EBO RATING -100 -80 -5 UNIT Collector Current ic -7 1.
BASE Collector Power Dissipation Ta=25°C Tc=25°C PC 1.
5 40 2.
COLLECTOR (HEAT SINK) 3.
EMITTER Junction Temperature Ti 150 JEDEC EIAJ Storage Temperature Range stg -55^...

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