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2SA1327

Part Number	2SA1327
Manufacturer	Toshiba
Description	SILICON PNP TRANSISTOR
Published	Jul 17, 2018
Detailed Description	SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS. AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES . MIN....
Datasheet	2SA1327 PDF File

Overview

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS.
AUDIO POWER AMPLIFIER APPLICATIONS.
FEATURES .
MIN.
h FE of 70 at -2V, -8A .
-10A Rated Collector Current .
MAX.
VcE(sat) of -0.
5V at -8A Iq .
20W at 25°C Case Temperature Unit in mm 10.
3MAX„ 03.
2 + 0.
2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current DC Pulse Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL VCBO VcEO v EB0 ic ICP PC T stg RATING -50 -20 -10 -20 2.
0 20 150 -55-150 UNIT 1.
BASE 2.
COLLECTOR 3.
EMITTER TOSHIBA Weight : 2 .
lg °C 2-10L1A ELECTRICAL CHARA...

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