DatasheetsPDF.com

2SC1955

Toshiba
Part Number 2SC1955
Manufacturer Toshiba
Description SILICON NPN TRANSISTOR
Published Jul 17, 2018
Detailed Description SILICON NPN EPITAXIAL PLANAR TYPE 2SC1955 VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES • . Output Power : Po=2.8W (...
Datasheet PDF File 2SC1955 PDF File

2SC1955
2SC1955

Overview
SILICON NPN EPITAXIAL PLANAR TYPE 2SC1955 VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES • .
Output Power : Po=2.
8W (Min.
) ( f=175MHz, VCC =13.
5V, Pi=0.
15W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VC C=13.
5V, P =4W, f=175MHz MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25 °C) Junction Temperature Storage Temperature Range SYMBOL v CB0 VCEO Vebo ic ?C T J T stg RATING 35 17 3.
5 0.
8 7.
5 175 -65 ~175 UNIT V V V A W °C °C Unit in mm J^9.
Z9lllAX.
0'a45MAX 1 1 00.
A 5 1 0&O8 c5 - s to «5 - M s 03 H ? EMITTER (CASE) ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)