DatasheetsPDF.com

2SC1199

Part Number	2SC1199
Manufacturer	Toshiba
Description	SILICON NPN TRANSISTOR
Published	Jul 17, 2018
Detailed Description	: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1199 HIGH FREQUENCY WIDE BAND AMPLIFIER APPLICATIONS. HIGH FREQUENCY LOW NOISE ...
Datasheet	2SC1199 PDF File

Overview

: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1199 HIGH FREQUENCY WIDE BAND AMPLIFIER APPLICATIONS.
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS.
FEATURES .
Low Noise for High and Low Frequency : NF=4 .
OdB (Max .
) : NF=lldB (Max.
) f=200MHz f=10kHz Unit in mm 09.
S9MAX.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL v CBO VCEO VEBO ic PC Tj T stg RATING 50 35 3 300 UNIT V V V mA 600 mW 150 -65 ~150 °C °C 1.
EMITTER 2.
BASE & colljv-or 4.
Ck:'i 7 .
TC-5, TI TOSHIBA 2-8DIA Weight : 1.
2g ELECTRICAL CHARACTERISTICS (Ta...

Similar Datasheet

2SC1102 SILICON POWER TRANSISTOR - SavantIC
2SC1102 NPN Transistor - INCHANGE
2SC1106 SILICON POWER TRANSISTOR - SavantIC
2SC1106 NPN Transistor - INCHANGE
2SC1108 SILICON POWER TRANSISTOR - SavantIC
2SC1108 NPN Transistor - INCHANGE
2SC1111 SILICON POWER TRANSISTOR - SavantIC
2SC1111 NPN Transistor - INCHANGE
2SC1112 NPN Transistor - INCHANGE
2SC1113 SILICON POWER TRANSISTOR - SavantIC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)