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2SC594

Part Number	2SC594
Manufacturer	Toshiba
Description	SILICON NPN TRANSISTOR
Published	Jul 17, 2018
Detailed Description	SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. VIDEO AMPLIFIER APPLICATIONS. HIGH SPEE...
Datasheet	2SC594 PDF File

Overview

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS.
VIDEO AMPLIFIER APPLICATIONS.
HIGH SPEED SWITCHING APPLICATIONS.
FEATURES • High Transition Frequency : fx=200MHz (Typ-) • Low Output Capacitance : C b=3.
5pF (Typ.
) • Low Saturation Voltage : V CE ( sat )=0.
3V (Max.
) at I c=100mA, I B =10mA • Complementary to 2SA594.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VcBO VcEO VEBO Collector Current Base Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C Storage Temperature Range ic IB PC TJ Tstg RATING 60 UNIT V 45 V 5V 200 mA 50 mA 750 mW 5W 175 °C -65VL...

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